WebJun 1, 2003 · The new way to obtain the high-quality InAs epilayers on the GaAs substrates is a two-step growth process: InAs grown directly on the GaAs substrates as the prelayers under In-rich conditions, and then growth of the InAs layers on such prelayers under As … WebThe reactants used were trimethylgallium 234 The Influence of As and Ga Prelayers on the Metal-Organic Chemical Vapor Deposition of GaAs/Ge 235 (TMGa), a group III source, and pure arsine (AsH3), a group V source. Silane (SiH4) was used as an n-type dopant source. …
Gas‐source molecular‐beam epitaxy of InGaP and GaAs on …
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Transfer Learning: Leveraging Pre-Trained Models for New Tasks …
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